The value of long tendons in design of tunnel layout and support

A project was initiated from hypotheses that the use of longer and different types of tendon support could lead to improved control of tunnel deformation in changing stress fields. An extensive literature study was conducted. Subsequently a tunnel was supported with various lengths and types of cable tendons. The tunnel was subjected to mining-induced stress changes. Tunnel deformations were measured using instrumentation. Results from the literature study and tunnel deformation measurements indicated within context that: (1) long tendons or other support systems cannot substitute for good tunnel layout; (2) long tendons effect a retain-and-hold function while shorter tendons strengthen and reinforce highly fractured tunnel walls; (3) larger boreholes or weakergrout reduce support system stiffness; (4) cable tendons have high shear resistance and debonding tendency; (5) long tendons are beneficial in sidewalls but not the hangingwall, (6) long tendons induce a more stable sidewall deformation distribution; (7) the updip sidewall deformed less than downdip; (8) more deformation occurred with stress decrease than with stress increase.     

Peripheral nerve stimulation by time-varying magnetic fields

PURPOSE: A study was performed to assess the stimulation threshold for healthy adults using sinusoidally oscillating gradients. METHOD: One hundred thirteen healthy adults were examined in the study. ECG and physiological parameters were measured. All measurements were performed of both the head and the abdomen. The subjects were measured in the supine position with the region of interest positioned in the center of the gradient coils. The measurement was performed for three orthogonal, four oblique, and double oblique orientations. RESULTS: No volunteer reported painful, severe stimulation. The mean thresholds for peripheral stimulation in head and body measurement were similar: 85.5% of stimulation during examination of the head and 87.6% during measurements of the abdomen were reported when the y-gradient was used. CONCLUSION: The greatest frequency of reported stimulations occurs when the y-gradient is used. This was confirmed by the results and supports the hypothesis that orthogonal to the y-axis the body has its largest conductive loop, resulting in the strongest peripheral stimulation.     

Initial experiences with the MR "magnitude contrast angiography of the lower extremities

45 patients with occlusive peripheral vascular disease were examined by MR angiography in a retrospective study. A FISP 3D sequence was used by acquiring a rephased and a dephased data set. The individual slices were post-processed by using a maximum-intensity-projection algorithm. The MRA results of the popliteal and tibioperoneal arteries were compared to conventional or digital angiography. In comparing these techniques MR angiography cannot be accepted for pre- and postoperative staging of patients with occlusive peripheral vascular disease. In future new MRA techniques may be useful in postoperative staging of patients with peripheral vascular stenosis.     

Dynamics of power MOSFET switching under unclamped inductiveloading conditions

The parasitic bipolar transistor inherent in a vertical power DMOSFET structure can have a significant impact on its reliability. Unclamped Inductive Switching (UIS) tests were used to examine the reliability of DMOSFET's in extremely harsh switching conditions. The reliability of a power DMOSFET under UIS conditions is directly related to the amount of avalanche energy the device can survive. A number of DMOSFET structures were critically examined under UIS conditions to determine the impact of bipolar transistor parameters on device reliability. The UIS dynamics were studied based on the results obtained from an advanced mixed device and circuit simulator in which the internal carrier dynamics were evaluated under boundary conditions imposed by the circuit operation. It is shown that premature open base bipolar transistor breakdown can occur when the p-base sheet resistance is high. A device structure with a shallow self-aligned p⁺ region is shown to prevent the parasitic bipolar turn-on and avoid premature UIS breakdown without compromising the power-switching efficiency. The simulation results are shown to be in excellent agreement with the measured data under a wide range of inductive loading conditions     

Evaluation of NDT methods for detection of prestressing steel damage at post-tensioned concrete structures

For an assessment of the risk potential of existing structures, where in the case of prestressing steel damage the load-bearing capacity could be significantly affected, non-destructive testing techniques which enable reliable evaluation of the condition of the prestressing steels are of utmost importance. During the demolition of a post-tensioned concrete bridge in Berlin where damage of prestressing wires due to hydrogen-induced stress corrosion cracking were found in former investigations, parts of the girders of the bridge superstructure could be taken out. After non-destructive investigations by means of two testing techniques based on magnetic leakage flux measurement and one technique based on electromagnetic resonance measurement, subsequent removal of the concrete cover up to the ducts, opening the ducts and evaluation of the prestressing steels allowed a verification of the results obtained by the NDT methods. From the results it can be concluded that areas with fractures of several wires can be detected by the two techniques based on magnetic leakage flux measurement.     

Tunneling through Thin Oxides—New Insights from Microscopic Calculations

In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO₂ gate oxides using microscopic models of Si[100]-SiO₂-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.